Silicon wafer manufacturing process

• Main Authors: CHEN HAIBIN, KU LIMING, YAN ZHIRUI
• Format: Patent
• Language: Chinese; English
• Published: 11.12.2020
• Subjects: CLEANING; CLEANING IN GENERAL; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; PREVENTION OF FOULING IN GENERAL; TRANSPORTING

The invention discloses a silicon wafer manufacturing process. The process comprises the following steps that (1) a silicon wafer is polished after grinding and corrosion; (2) the silicon wafer is pre-cleaned after being polished to remove abrasive residues on the surface of the silicon wafer; (3) low-temperature annealing is performed on the silicon wafer; and (4) the silicon wafer subjected to low-temperature annealing is finally cleaned to remove metal residues on the surface in the step (3), and finally the metal level is detected . According to the silicon wafer manufacturing process, a annealing furnace is used for performing low-temperature annealing on the silicon wafer before final cleaning, so that metal in the silicon wafer is diffused to the surface, and then the metal is removed through the final cleaning process; and according to the silicon wafer machined by the process, the metal contamination level on the surface of the silicon wafer can be effectively reduced, particularly, as time goes on,