PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITION (ALD) OR CHEMICAL VAPOR DEPOSITION (CVD), AND ALD/CVD METHOD USING SAME

• Main Authors: SEOK JANG-HYEON, HWANG JUNG-WUN, MUN KI-YEUNG, PARK JUNG-WOO, YEOM KYU-HYUN, LEE JU-WON
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2020
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a precursor compound and, more specifically, to: a nonpyrophoric precursor compound usable for thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD); and an ALD/CVD method using same. 本发明涉及适合在通过原子层沉积(ALD)或化学气相沉积(CVD)的薄膜沉积中使用的前体化合物和更特别地涉及不易燃的前体化合物，并且涉及使用其的ALD/CVD工艺。