PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITION (ALD) OR CHEMICAL VAPOR DEPOSITION (CVD), AND ALD/CVD METHOD USING SAME
The present invention relates to a precursor compound and, more specifically, to: a nonpyrophoric precursor compound usable for thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD); and an ALD/CVD method using same. 本发明涉及适合在通过原子层沉积(ALD)或化学气相沉积(CVD)的薄膜沉积中使用的前体...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.12.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a precursor compound and, more specifically, to: a nonpyrophoric precursor compound usable for thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD); and an ALD/CVD method using same.
本发明涉及适合在通过原子层沉积(ALD)或化学气相沉积(CVD)的薄膜沉积中使用的前体化合物和更特别地涉及不易燃的前体化合物,并且涉及使用其的ALD/CVD工艺。 |
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Bibliography: | Application Number: CN201880092457 |