SEMICONDUCTOR MEMORY DEVICE

• Main Authors: KIM JAE TAEK, HONG YOUNG OCK
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2020
• Subjects: ELECTRICITY

The present technology provides a semiconductor memory device. The semiconductor memory device includes a source film spaced from a substrate and disposed on the substrate, a conductive contact plug penetrating the source film, and a dummy stack body including dummy interlayer insulating films and sacrificial insulating films alternately stacked on the conductive contact plug. 半导体存储器装置。本技术提供了一种半导体存储器装置。该半导体存储器装置包括与基板间隔开并设置在基板上的源极膜、贯穿源极膜的导电接触插塞、以及包括在导电接触插塞上交替层叠的虚设层间绝缘膜和牺牲绝缘膜的虚设层叠主体。