NONVOLATILE MEMORY DEVICE

• Main Authors: KANG SEO-GOO, HAN JEE HOON, SON YOUNG HWAN, KANAMORI KOHJI, MOON JE SUK
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2020
• Subjects: ELECTRICITY

A nonvolatile memory device includes a mold structure having a stack of word lines on a substrate and first and second string selection lines on the word lines, a first cutting structure through the mold structure, a second cutting structure through the mold structure, the second cutting structure being spaced apart from the first cutting structure, a channel structure penetrating the mold structure to be connected to the substrate, the channel structure being between the first and second cutting structures, a first cutting line cutting through the first string selection line but not through the second string selection line, the first cutting line being between the first and second cutting structures, and a second cutting line cutting through the second string selection line but not through the first string selection line, the second cutting line being between the second cutting structure and the channel structure. 一种非易失性存储器件包括：模结构，其具有在衬底上的字线以及在字线上的第一串选择线和第二串选择线的堆叠；穿过模结构的第一切割结构；穿过模结构的第二切割结构，第二切割结构与第一切割结构间隔开；穿