Photoelectric conversion element and solid-state image capture device

• Main Authors: HASEGAWA YUTA, TAKEMURA ICHIRO, NAKAYAMA NORIKAZU, MOGI HIDEAKI, YAMAGUCHI TETSUJI, OBANA YOSHIAKI, SHIMOKAWA MASAMI, YAGI IWAO, MATSUZAWA NOBUYUKI
• Format: Patent
• Language: Chinese; English
• Published: 27.11.2020
• Subjects: ELECTRICITY

A photoelectric conversion element according to an embodiment of the present disclosure is provided with: a first electrode and a second electrode which are disposed opposing each other; and a photoelectric conversion layer which is disposed between the first electrode and the second electrode and which includes a first organic semiconductor material, a second organic semiconductor material, and athird organic semiconductor material having mutually different skeletons, wherein the first organic semiconductor material is a fullerene or a fullerene derivative, the second organic semiconductor material, in a monolayer film state, has a higher linear absorption coefficient for the maximum optical absorption wavelength in a visible light region than monolayer films of the first organic semiconductor material and the third organic semiconductor material, and the third organic semiconductor material has a HOMO level value that is greater than or equal to the HOMO level of the second organicsemiconductor material. 根据