Preparation process of electronic-grade TFT photoresist stripping solution

• Main Authors: CHEN SHAOJUN, LIN DERONG, LUO YANCHENG, WU QUANGUI, REN JIANYE, CHEN ZHONGYOU, QIU JIANMING, WU JUNXIAN
• Format: Patent
• Language: Chinese; English
• Published: 27.11.2020
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

The invention belongs to the technical field of thin film transistor processing, and provides a preparation process of an electronic-grade TFT photoresist stripping solution. The preparation process of the electronic-grade TFT photoresist stripping liquid comprises the following steps: mixing the raw materials of the stripping liquid, and filtering to obtain the electronic-grade TFT photoresist stripping liquid. The raw materials comprise organic amine, dimethyl sulfoxide, diethylene glycol monobutyl ether, N-methyl pyrrolidone, dimethylacetamide, tetramethylammonium hydroxide and hydroxylamine. The photoresist stripping liquid prepared by the preparation process is stable in quality, has good photoresist stripping and dissolving capacity for various chips, can completely remove photoresist, and has no residue. 本发明属于薄膜晶体管加工技术领域，提供了一种电子级TFT光阻剥离液的制备工艺。该电子级TFT光阻剥离液的制备工艺包括将剥离液的原料混合后过滤即得；原料包括：有机胺、二甲基亚砜、二乙二醇单丁醚、N-甲基吡咯烷酮、二甲基乙酰胺、四甲基氢氧化铵以及羟胺。由该制备工艺制备得到的光阻剥离液质量稳定，对各种芯片具有良好的光刻胶剥离和溶解能力，能够完全去除光刻胶，无残留。