Preparation method of pseudo-magnetic tunnel junction unit replacing through hole
The invention discloses a preparation method of a pseudo-magnetic tunnel junction unit replacing a through hole. The invention relates to the technical field of magnetic random access memories. The pseudo-magnetic tunnel junction unit comprises a pseudo-magnetic tunnel junction (Dummy-MTJ) reference...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
24.11.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a preparation method of a pseudo-magnetic tunnel junction unit replacing a through hole. The invention relates to the technical field of magnetic random access memories. The pseudo-magnetic tunnel junction unit comprises a pseudo-magnetic tunnel junction (Dummy-MTJ) reference layer and a pseudo-magnetic tunnel junction (Dummy-MTJ) barrier layer, the barrier layer of the pseudo-magnetic tunnel junction (Dummy-MTJ) needs to be replaced by other materials with better conductivity, and the materials are preferably Mg. According to the preparation method of the pseudo-magnetic tunnel junction unit replacing the through hole, the pseudo-magnetic tunnel junction (Dummy-MTJ) is adopted to replace the through hole (VIA) in the peripheral circuit area (Peripheral) of the magnetic random access memory (MRAM), and circuit connection can also be completed.
本发明公开了一种替代通孔的赝磁性隧道结单元制备方法,涉及磁性随机存储器技术领域,所述该赝磁性隧道结单元,包括赝磁性隧道结(Dummy-MTJ)参考层、赝磁性隧道结(Dummy-MTJ)势垒层,其中,赝磁性隧道结(Dummy-MTJ)的势垒层需用其他导电率较好的材料代替,这里的材料优选Mg |
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Bibliography: | Application Number: CN201910433648 |