Preparation method of pseudo-magnetic tunnel junction unit replacing through hole

• Main Authors: XIAO RONGFU, GUO YIMIN, MA YUYANG, CHEN JUN
• Format: Patent
• Language: Chinese; English
• Published: 24.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a preparation method of a pseudo-magnetic tunnel junction unit replacing a through hole. The invention relates to the technical field of magnetic random access memories. The pseudo-magnetic tunnel junction unit comprises a pseudo-magnetic tunnel junction (Dummy-MTJ) reference layer and a pseudo-magnetic tunnel junction (Dummy-MTJ) barrier layer, the barrier layer of the pseudo-magnetic tunnel junction (Dummy-MTJ) needs to be replaced by other materials with better conductivity, and the materials are preferably Mg. According to the preparation method of the pseudo-magnetic tunnel junction unit replacing the through hole, the pseudo-magnetic tunnel junction (Dummy-MTJ) is adopted to replace the through hole (VIA) in the peripheral circuit area (Peripheral) of the magnetic random access memory (MRAM), and circuit connection can also be completed. 本发明公开了一种替代通孔的赝磁性隧道结单元制备方法，涉及磁性随机存储器技术领域，所述该赝磁性隧道结单元，包括赝磁性隧道结(Dummy-MTJ)参考层、赝磁性隧道结(Dummy-MTJ)势垒层，其中，赝磁性隧道结(Dummy-MTJ)的势垒层需用其他导电率较好的材料代替，这里的材料优选Mg