Air gap graphene field effect transistor structure and production method

• Main Authors: KANG XIAOXU, CHEN SHOUMIAN, SHEN RUOXI, ZHONG XIAOLAN
• Format: Patent
• Language: Chinese; English
• Published: 20.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of integrated circuits, and discloses an air gap graphene field effect transistor structure. A graphene material is used as a channel, and an upper surfaceand a lower surface of the channel are both partially or completely contacted with air or vacuum. The graphene material is obtained by spin-coating a graphene oxide material at a channel position andthen performing high-temperature reduction. Air gaps are formed above and below the channel of the graphene material so as to form suspended channels, therefore, a problem that carrier mobility of the graphene channel is greatly reduced due to contact between the graphene channel and other materials is solved; and the high mobility of carriers in graphene is reserved to the maximum extent, degradation of graphene surface characteristics is reduced, electrical characteristics of a graphene device are improved, graphene oxide is spin-coated to the channel position, then high-temperature reduction is performed to obtain