CU-NI ALLOY SPUTTERING TARGET
A Cu-Ni alloy sputtering target including Ni, the remainder comprising Cu and unavoidable impurities, wherein the twinning ratio defined by the expression LT/L*100 is in the range of 35% to 65%, wherein L is the total grain boundary length as the length of the boundary formed between crystals for wh...
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Format | Patent |
Language | Chinese English |
Published |
13.11.2020
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Abstract | A Cu-Ni alloy sputtering target including Ni, the remainder comprising Cu and unavoidable impurities, wherein the twinning ratio defined by the expression LT/L*100 is in the range of 35% to 65%, wherein L is the total grain boundary length as the length of the boundary formed between crystals for which the orientation difference between adjacent crystal grains is in the range of 5 to 180 degrees,and LT is the twin crystal boundary length as the length of a grain boundary which is an orientation difference for which each of three lattice points is confirmed when the (111) plane and the (110) plane of a face-centered cubic crystal are rotated about a rotational axis.
本发明提供一种Cu-Ni合金溅射靶,其包含Ni,且其余部分由Cu和不可避免的杂质组成,其中,当将在相邻的晶粒之间的取向差在5°以上且180°以下的范围内的晶粒之间所形成的晶界的长度设为总晶界长度L,并将使面心立方晶格的(111)面及(110)面作为旋转轴旋转的情况下分别确认到3个晶格点的取向差的晶界的长度设为孪晶晶界长度LT时,由LT/L×100定义的孪晶比率在35%以上且65%以下的范围内。 |
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AbstractList | A Cu-Ni alloy sputtering target including Ni, the remainder comprising Cu and unavoidable impurities, wherein the twinning ratio defined by the expression LT/L*100 is in the range of 35% to 65%, wherein L is the total grain boundary length as the length of the boundary formed between crystals for which the orientation difference between adjacent crystal grains is in the range of 5 to 180 degrees,and LT is the twin crystal boundary length as the length of a grain boundary which is an orientation difference for which each of three lattice points is confirmed when the (111) plane and the (110) plane of a face-centered cubic crystal are rotated about a rotational axis.
本发明提供一种Cu-Ni合金溅射靶,其包含Ni,且其余部分由Cu和不可避免的杂质组成,其中,当将在相邻的晶粒之间的取向差在5°以上且180°以下的范围内的晶粒之间所形成的晶界的长度设为总晶界长度L,并将使面心立方晶格的(111)面及(110)面作为旋转轴旋转的情况下分别确认到3个晶格点的取向差的晶界的长度设为孪晶晶界长度LT时,由LT/L×100定义的孪晶比率在35%以上且65%以下的范围内。 |
Author | KATO SHINJI IO KENSUKE |
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DocumentTitleAlternate | Cu-Ni合金溅射靶 |
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Snippet | A Cu-Ni alloy sputtering target including Ni, the remainder comprising Cu and unavoidable impurities, wherein the twinning ratio defined by the expression... |
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SubjectTerms | ALLOYS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS |
Title | CU-NI ALLOY SPUTTERING TARGET |
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