CU-NI ALLOY SPUTTERING TARGET

• Main Authors: IO KENSUKE, KATO SHINJI
• Format: Patent
• Language: Chinese; English
• Published: 13.11.2020
• Subjects: ALLOYS; CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF ALLOYS OR NON-FERROUS METALS

A Cu-Ni alloy sputtering target including Ni, the remainder comprising Cu and unavoidable impurities, wherein the twinning ratio defined by the expression LT/L*100 is in the range of 35% to 65%, wherein L is the total grain boundary length as the length of the boundary formed between crystals for which the orientation difference between adjacent crystal grains is in the range of 5 to 180 degrees,and LT is the twin crystal boundary length as the length of a grain boundary which is an orientation difference for which each of three lattice points is confirmed when the (111) plane and the (110) plane of a face-centered cubic crystal are rotated about a rotational axis. 本发明提供一种Cu-Ni合金溅射靶，其包含Ni，且其余部分由Cu和不可避免的杂质组成，其中，当将在相邻的晶粒之间的取向差在5°以上且180°以下的范围内的晶粒之间所形成的晶界的长度设为总晶界长度L，并将使面心立方晶格的(111)面及(110)面作为旋转轴旋转的情况下分别确认到3个晶格点的取向差的晶界的长度设为孪晶晶界长度LT时，由LT/L×100定义的孪晶比率在35％以上且65％以下的范围内。