Heat treatment method of high-purity silicon rod, and preparation method of silicon wafer

• Main Authors: BAO SHOUZHEN, XIAO JIANZHONG, DING XIAOHAI, WANG TIHU, ZONG BING
• Format: Patent
• Language: Chinese; English
• Published: 10.11.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a heat treatment method of a high-purity silicon rod, and a preparation method of a silicon wafer. The heat treatment method of the high-purity silicon rod comprises the steps:placing a high-purity silicon rod in an insulating protective sleeve, and then heating the high-purity silicon rod in a radio frequency mode; carrying out first preheating by using microwaves before radio frequency heating, and then carrying out radio frequency heating until the end; or, arranging an inductor used for heat radiation in the insulating protective sleeve, heating the inductor throughradio frequency so as to carry out second preheating on the high-purity silicon rod, then removing the inductor, and continuously carrying out radio frequency heating till the end.The preparation method of the silicon wafer comprises the following steps: heating the high-purity silicon rod by using the heat treatment method of the high-purity silicon rod, and then carrying out thermal stress crushing to obtain a high-puri