Light emitting diode chip and preparation method thereof

• Main Authors: LI PENG, DONG BINZHONG, GUO LEILEI, WANG JIANGBO, GE YONGHUI, WANG QUN
• Format: Patent
• Language: Chinese; English
• Published: 03.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light emitting diode chip and a preparation method thereof, and belongs to the technical field of semiconductors. The light emitting diode chip comprises a substrate, a bufferlayer, an undoped gallium nitride layer, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, an N-type electrode and a P-type electrode. The buffer layer is laid on the substrate, and the undoped gallium nitride layer is laid on the buffer layer; the N-type semiconductor layer and the P-type semiconductor layer are arranged on the undoped gallium nitride layer at intervals; a groove is formed between the N-type semiconductor layer and the P-type semiconductor layer, and the groove is in the shape of an inverted trapezoidal prism; the active layer is laid on the innerwall of the groove; the N-type electrode is arranged on the N-type semiconductor layer, and the P-type electrode is arranged on the P-type semiconductor layer. According to the invention, the front light emitting efficiency o