Transition metal doped ZnO nanowire array, preparation method and application of transition metal doped ZnO nanowire array

• Main Authors: WANG WEI, DAI RONG, ZHANG LEI, MEN JINGRU, ZHANG FUCHUN, WU QIAO
• Format: Patent
• Language: Chinese; English
• Published: 23.10.2020
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; PERFORMING OPERATIONS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

The invention discloses a transition metal doped ZnO nanowire array, a preparation method and application of the transition metal doped ZnO nanowire array. The preparation method comprises the following steps: depositing a crystal seed layer on a silicon substrate by adopting magnetron sputtering and calcining methods, and then depositing a precursor solution on the crystal seed layer to obtain the transition metal doped ZnO nanowire array. The Zn1-xMnxO nanowire array has obvious room-temperature ferromagnetism, has good saturation magnetization and coercive field, is an excellent magneto-optical material, and has huge application potential in optical storage and magnetic storage devices. 本发明公开了一种过渡金属掺杂ZnO纳米线阵列、制备方法及其应用。所述制备方法为采用磁控溅射和煅烧的方法在硅基板衬底上沉积晶种层，然后在上面沉积前驱体溶液得到过渡金属掺杂ZnO纳米线阵列，Zn1-xMnxO纳米线阵列具有明显的室温铁磁性，具有良好的饱和磁化强度和矫顽场，是一种优良的磁光材料，在光存储和磁存储器件中有着巨大的应用潜力。