METAL INSULATOR METAL (MIM) CAPACITORS
Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
20.10.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a dielectric layer within the opening of the SiN layer. The dielectric layer may include a recess. Thecapacitor may also include a second electrode having a first side and a second side. The first side of the second electrode may be included within the recess of the dielectric layer.
本发明题为"金属绝缘体金属(MIM)电容器"。电容器的实施方式可包括:第一电极,该第一电极具有第一侧和第二侧。电容器还可包括被包括在第一电极的第二侧上的氮化硅(SiN)层。开口可被包括在氮化硅层中。电容器可包括位于SiN层的开口内的介电层。介电层可包括凹部。电容器还可包括具有第一侧和第二侧的第二电极。第二电极的第一侧可被包括在介电层的凹部内。 |
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Bibliography: | Application Number: CN202010271693 |