Preparation method of carbon quantum dot composite material taking terbium-doped sunflower stem pith as carbon source

The invention discloses a preparation method of a carbon quantum dot composite material taking terbium-doped sunflower stem pith as a carbon source. The preparation method comprises the following steps: uniformly mixing sunflower stem pith and sulfuric acid in proportion, putting an obtained mixture...

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Bibliographic Details
Main Authors LI HUIZHI, XU JUN, ZHAO WEILIN, WANG CONGLING
Format Patent
LanguageChinese
English
Published 16.10.2020
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Summary:The invention discloses a preparation method of a carbon quantum dot composite material taking terbium-doped sunflower stem pith as a carbon source. The preparation method comprises the following steps: uniformly mixing sunflower stem pith and sulfuric acid in proportion, putting an obtained mixture into a reaction kettle, placing the reaction kettle into an oven, regulating the temperature of theoven to 180 +/-2 DEG C, reacting for 6 hours, cooling to 24 +/-2 DEG C, taking out an obtained solution, centrifuging, filtering, adding ammonia water to regulate the pH value to 7.0 +/-0.1, dialyzing and freeze-drying to obtain the carbon quantum dot powder; dissolving the carbon quantum dot powder in water to obtain a solution, uniformly mixing the solution with a terbium nitrate solution in proportion, putting an obtained mixed solution into a reaction kettle, putting the reaction kettle into a drying oven, adjusting the temperature to 160 +/-2 DEG C, reacting for 6 hours, cooling to 24 +/-2 DEG C, taking out an o
Bibliography:Application Number: CN202010595282