Semiconductor structure and forming method thereof

• Main Authors: LI MAO, ZHANG JINSHU, WANG GANGNING
• Format: Patent
• Language: Chinese; English
• Published: 09.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor structure and a forming method thereof. The semiconductor structure comprises a substrate; a body region and a drift region which are located in the substrate;a gate structure which is located on the substrate and stretches across and covers part of the body region and part of the drift region; a source region which is located in the body region and is close to the gate structure; a drain region which is located in the drift region; a silicide barrier layer which covers the side wall and part of the top of one side, close to the drain region, of the gate structure and the top of the substrate between the gate structure and the drain region in a conformal manner; an interlayer dielectric layer covering the gate structure and the silicide barrier layer; a first conductive plug which penetrates through the interlayer dielectric layer and is electrically connected with the gate structure, wherein the first conductive plug further covers the silicidebarrier layer located on