Method for analyzing temperature-induced phase change of silicate crystals by using in-situ high-temperature Raman spectroscopy
The invention discloses a method for analyzing temperature-induced phase change of silicate crystals by using in-situ high-temperature Raman spectroscopy, and belongs to the field of material structure analysis under extreme conditions. The method is characterized by comprising the following steps t...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
22.09.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a method for analyzing temperature-induced phase change of silicate crystals by using in-situ high-temperature Raman spectroscopy, and belongs to the field of material structure analysis under extreme conditions. The method is characterized by comprising the following steps that (1) a high-temperature Raman spectrometer is improved; (2) a novel high-temperature observationfurnace with the model of DP is utilized, and the heating and cooling speed is high; (3) the Raman spectrometer is calibrated before the test; (4) the sample is put into a high-temperature-resistant platinum crucible to carry out a heating experiment; and (5) a spectrogram obtained by detection is analyzed so as to judge which temperature point phase of the crystal is changed into which substance.The method is advantaged in that a Raman spectrogram with a high signal-to-noise ratio can be obtained, the temperature-induced phase change process of the crystal can be judged, a method is providedfor analyzing a substance |
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Bibliography: | Application Number: CN202010546321 |