METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: NOZAWA SYUJI, LEE SUNGHIL, YAMAGUCHI TATSUYA
• Format: Patent
• Language: Chinese; English
• Published: 18.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method of manufacturing a semiconductor device, a method of manufacturing a cut semiconductor device, the method including: a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers; a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film; and a desorbing process of desorbingand diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature. 本发明涉及半导体装置的制造方法。[课题]削减导体装置的制造工序。[解决方案]半导体装置的制造方法包括：第1层叠工序、第2层叠工序和脱离工序。第1层叠工序中，在形成有凹部的基板上层叠聚合物膜，所述聚合物膜是通过多种单体的聚合而生成的具有脲键的聚合物的膜。第2层叠工序中，在至少凹部的底部和侧壁由聚合物膜所覆盖的状态下，在基板上层叠封固膜。脱离工序中，将基板加热至第1温度，从而使聚合物膜解聚，使封固膜的下层的聚合物膜借助封固膜而脱离。