SEMICONDUCTOR STRUCTURE, MANUFACTURING METHOD THEREOF AND METHOD FOR DETECTING SHORT THEREOF

• Main Authors: SU HUNG-MING, TAKESAKO KAZUAKI, TSENG CHUNIAO
• Format: Patent
• Language: Chinese; English
• Published: 15.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a semiconductor structure including a substrate, at least two tested structures, an isolation structure, and a short-circuit detection structure. At least two tested structures are disposed on the substrate. At least two tested structures include a conductive material. The isolation structure is sandwiched between at least two tested structures. The detection structure includes a detecting layer, and the detecting layer is disposed on one of at least two tested structures, so that a short circuit defect between at least two tested structures may be identified in an electron beam detecting process, and the detecting layer includes a conductive material. A manufacturing method of the semiconductor structure and a method for detecting a short circuit of the semiconductor structureare also provided. 本发明提供一种半导体结构包括衬底、至少二待测结构、隔离结构以及检测短路结构。至少二待测结构配置于衬底上。至少二待测结构的材料包括导电材料。隔离结构夹于至少二待测结构之间。检测短路结构包括检测层，检测层配置于至少二待测结构中的一者上，以使至少二待测结构之间的短路缺陷可于电子束检测制程中被识别，且检测层的材料包括导电材料。另提供一种半导体结构的制造方法及半导体结构的检测短路方法。