RE-based integrated photonic and electronic layered structures

Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of th...

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Bibliographic Details
Main Authors LEBBY MICHAEL, HAMMOND RICH, CLARK ANDREW, PELZEL RODNEY, DARGIS RYTIS
Format Patent
LanguageChinese
English
Published 11.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of the substrate, wherein the first region and the second region are non-overlapping. 本发明的系统和方法描述了在单个衬底上生长基于RE的集成光子和电子层状结构。所述层状结构包括衬底，在所述衬底的第一区域上的外延扭转稀土氧化物层，和在所述衬底的第二区域上的稀土磷属元素化物层，其中所述第一区域和所述第二区域是非重叠的。
Bibliography:Application Number: CN201980008924