SEMICONDUCTOR PLASMA PROCESSING EQUIPMENT WITH WAFER EDGE PLASMA SHEATH TUNING ABILITY

• Main Author: SARODE VISHWANATH YOGANANDA
• Format: Patent
• Language: Chinese; English
• Published: 11.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

The invention discloses semiconductor plasma processing equipment with wafer edge plasma sheath tuning ability. Embodiments of the disclosure generally include methods and apparatuses that improve theetch rate uniformity across a surface of a substrate by controlling the shape of a plasma sheath formed across a substrate, such as a semiconductor wafer, during plasma processing. Embodiments of thedisclosure will include the adjustment of one or more plasma processing variables and/or the adjustment of the configuration of process kit hardware that is in close proximity to a substrate and/or supports the substrate during processing. Furthermore, embodiments of the disclosure will include replacement of only a small number of consumable parts within the process kit hardware while the remaining parts of the process kit hardware are reused for long periods of time without venting the process chamber. The replacement of the consumable parts can be completed using an automated method of swapping used parts without v