Titanium-dioxide-photonic-crystal-based gallium-nitride-based surface laser and preparation method

• Main Authors: XU JIAQI, LIU MEIYU, LIU QIFA, XU HANLEI, HUANGFU TIAN
• Format: Patent
• Language: Chinese; English
• Published: 08.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

The invention discloses a titanium-dioxide-photonic-crystal-based surface-emitting gallium-nitride-based laser and a preparation method thereof. The laser comprises a sapphire substrate layer, an n-GaN layer, an n-AlGaN layer, a waveguide n-GaN layer, an n-electrode, a multilayer quantum well active layer formed by InGaN/GaN in pairs, a p-GaN layer, a p-electrode and a TiO2 photonic crystal layer.According to the invention, TiO2 is used as the material of the photonic crystal layer, beneficial regulation and control of light field mode distribution are realized, efficient coupling in the photonic crystal can be realized, and realization of low threshold of the laser is facilitated. The photonic crystal layer is grown and prepared on the surface of the wafer, so that the method is simplerand more convenient by being compared with a traditional method of introducing photonic crystals into a wafer material, and the difficulty of preparation and processing is reduced. 本发明公开了一种基于二氧化钛光子晶体的面发射型氮化镓基激光器及制备方法，包括蓝宝石衬底层、