Method for direct patterned growth of atomic layer metal dichalcogenides with pre-defined width

• Main Author: HARUTYUNYAN AVETIK
• Format: Patent
• Language: Chinese; English
• Published: 08.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method for direct patterned growth of atomic layer metal dichalcogenides with pre-defined width, and provides a method of growing patterns of an atomic layer of metal dichalcogenides. The method comprises: providing a substrate, providing aligned patterns of carbon nanostructures on the substrate, providing a first metal portion in contact with a first portion of the patterns of carbon nanostructures and a second metal portion in contact with a second portion of the patterns of carbon nanostructures, depositing a salt layer on the substrate and the patterns of carbonnanostructures, resistively heating the patterns of carbon nanostructures to remove the patterns of carbon nanostructures and salt deposited thereon from the substrate, wherein removing the patterns of carbon nanostructures and salt deposited thereon from the substrate provides salt patterns on the substrate, and growing an atomic layer of metal dichalcogenides on the salt patterns, wherein the atomic layer of metal dicha