CRACK-RESISTANT POLYSILOXANE DIELECTRIC PLANARIZING COMPOSITIONS, METHODS AND FILMS

A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks include at least one selected from the group of an aryl group or an alk...

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Bibliographic Details
Main Authors HUANG HONG MIN, XU HELEN XIAO
Format Patent
LanguageChinese
English
Published 01.09.2020
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Summary:A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks include at least one selected from the group of an aryl group or an alkyl group, with substituted or unsubstituted carbons. 本公开涉及一种用于使半导体器件表面平坦化的组合物,所述组合物包含催化剂、至少一种溶剂以及至少一种聚硅氧烷树脂,所述至少一种聚硅氧烷树脂包含聚倍半硅氧烷嵌段和聚二硅氧烷嵌段。聚二硅氧烷嵌段包括选自以下的至少一种:具有取代或未取代的碳的芳基基团或烷基基团。
Bibliography:Application Number: CN201880087090