Hybrid imaging detector structure

The invention discloses a hybrid imaging detector structure, which comprises a visible light sensor and an infrared sensor which are stacked up and down, and is characterized in that light firstly enters the visible light sensor, is absorbed and filtered, and then further enters the infrared sensor,...

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Bibliographic Details
Main Authors KANG XIAOXU, ZHONG XIAOLAN
Format Patent
LanguageChinese
English
Published 25.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:The invention discloses a hybrid imaging detector structure, which comprises a visible light sensor and an infrared sensor which are stacked up and down, and is characterized in that light firstly enters the visible light sensor, is absorbed and filtered, and then further enters the infrared sensor, wherein the visible light sensor is of a sealing cover structure, and the infrared sensor is sealedon a substrate of a single chip in a vacuum mode. According to the invention, a traditional CMOS-MEMS micro-bridge resonant cavity structure is utilized to carry out middle and far infrared detection, and meanwhile, vacuum packaging and visible light detection are realized by using a sealing cover with a pn junction or a metal semiconductor contact barrier device, so that low-cost, high-quality and phase-difference-free single-chip image fusion of visible light and middle and far infrared images is realized. 本发明公开了一种混合成像探测器结构，包括：上下叠设的可见光传感器和红外传感器，光线先入射到可见光传感器上，经吸收及过滤后，再进一步入射到红外传感器上；其中，所述可见光传感器为封盖结构，将所述红外传感器真空密封在单芯片的衬
Bibliography:Application Number: CN202010425137