TECHNIQUES FOR IMPROVED REMOVAL OF SACRIFICIAL MASK

A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and per...

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Main Authors LEE TERRANCE, WHITESELL HARRY S, LEE KWANGDUK, LIU TZU-YU, PRASAD RAJESH, ZHAN NING, COURNOYER JAMES, SHIM KYU-HA, BERGMAN ERIC J, KLOCKE JOHN LEE
Format Patent
LanguageChinese
English
Published 21.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350 DEGC. 一种方法可包含在器件结构上形成牺牲性掩模，牺牲性掩模包括碳基材料。方法可更包含蚀刻牺牲性掩模的暴露区中的存储器结构，将蚀刻增强物质植入到牺牲性掩模中，以及在小于350℃的蚀刻温度下执行湿式蚀刻以选择性地去除牺牲性掩模。
Bibliography:Application Number: CN201880085850