A method for making a fine annular charge storage electrode in a semiconductor device using a phase shift mask

The present invention provides a method for making a fine annular charge storage electrode in a semiconductor device, which is capable of easily forming the charge storage electrode having a double cylinder-shaped structure and a fine annular pattern which is smaller than the wavelength from the lig...

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Bibliographic Details
Main Authors CHANG NAM AHN, IK BOUM HUR, HUNG EIL KIM
Format Patent
LanguageEnglish
Published 17.01.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a method for making a fine annular charge storage electrode in a semiconductor device, which is capable of easily forming the charge storage electrode having a double cylinder-shaped structure and a fine annular pattern which is smaller than the wavelength from the light source, using a phase-shift mask. Accordingly, the present invention has an effect in that the reliability of a memory device having the charge storage electrode is improved, by removing the bad contact in the double cylinder-shaped structure, and that the surface of the charge storage electrode can be easily increased from 20% to 80%.
Bibliography:Application Number: CN19951009438