Method for fading ITO etching lines

The invention discloses a method for fading ITO (Indium Tin Oxide) etching lines. The method comprises the following steps of: drawing ITO channel patterns, setting the line spacing of the ITO channelpatterns as A, and setting a process tolerance value of the line spacing of the ITO channel patterns...

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Bibliographic Details
Main Authors ZHENG QILIN, LIU YUEBAO, YE FEI, YAN ZHUBING, LIAO XIAORUI, ZHANG YANG
Format Patent
LanguageChinese
English
Published 07.08.2020
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:The invention discloses a method for fading ITO (Indium Tin Oxide) etching lines. The method comprises the following steps of: drawing ITO channel patterns, setting the line spacing of the ITO channelpatterns as A, and setting a process tolerance value of the line spacing of the ITO channel patterns as n; drawing outer-layer ITO suspension blocks close to the ITO channel patterns in a gap betweenthe ITO channel patterns, wherein the distance between the outer-layer ITO suspension blocks and the ITO channel patterns is A, and the process tolerance value at the position is n; and drawing inner-layer ITO suspension blocks which are not adjacent to the ITO channel pattern, wherein the gap between the inner-layer ITO suspension blocks is B, and B is less than or equal to |n|. The invention provides the method for fading ITO etching lines, a traditional equidistant gap arrangement mode is abandoned, the unavoidable process tolerance is fully considered, the distance between the suspensionblocks is reasonably set, c
Bibliography:Application Number: CN202010504618