Ferroelectric assemblies and methods of forming ferroelectric assemblies

• Main Authors: LIAO ALBERT, SIDDIK MANZAR
• Format: Patent
• Language: Chinese; English
• Published: 04.08.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor alsohas a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 . Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide. 一些实施例包含铁电组合件。一些实施例包含一种电容器，所述电容器在第一电极与第二电极之间具有铁电绝缘材料。所述电容器还在所述第二电极与所述铁电绝缘材料之间具有金属氧化物。所述金属氧化物具有小于或等于约的厚度。一些实施例包含一种形成组合件的方法。在含半导体基底上方形成第一电容器电极。在所述第一电极上方形成铁电绝缘材料。在所述铁电绝缘材料上方形成含金属材料。氧化所述含金属材料以由所述含金属材料形成金属氧化物。在所述金属氧化物上方形成第二电极。