Low-time-delay high-side driving circuit suitable for GaN device

• Main Authors: HE NINGYE, CHEN ZHENHAI, WANG LI, WANG DONG, WU YONG, NING RENXIA, BAO JIE, XU YUAN, LYU HAIJIANG
• Format: Patent
• Language: Chinese; English
• Published: 28.07.2020
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

The invention discloses a low-time-delay high-side driving circuit suitable for a GaN device. The circuit comprises a low-time-delay high-voltage level shifting circuit and an output driving circuit.Low-voltage input data firstly enter the low-delay high-voltage level shifting circuit to obtain low-potential floating driving data Din, and the low-potential floating driving data Din enters an output driving circuit and is driven and amplified to obtain an output signal HO with relatively high driving capability; according to the low-delay high-voltage level shifting circuit, two groups of ground potentials of a low-voltage ground VSS and a floating ground SW need to be used, and the output driving circuit only needs to use the floating ground SW. According to the low-delay high-side driving circuit for the GaN device, the delay of the level shifting circuit is reduced through a positive feedback driving current enhancement technology, the driving current can be adaptively adjusted according to the size of a lo