Crystal growth atmosphere for oxyorthosilicate materials production

• Main Authors: COHEN PETER CARL, CAREY ALEXANDER ANDREW, ANDREACO MARK S
• Format: Patent
• Language: Chinese; English
• Published: 28.07.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a crystal growth atmosphere for oxyorthosilicate materials production. A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen. 本发明涉及用于生产氧正硅酸盐材料的晶体生长气氛。公开了生长稀土氧正硅酸盐晶体的方法和使用所述方法生长的晶体。所述方法包括通过熔融包含至少一种第一稀土元素的第一物质来制备熔体和提供包含惰性气体和含氧气体的气氛。