PLASMA ETCHING METHOD USING FARADAY CAGE

• Main Authors: PARK JEONG-HO, KIM CHUNG-WAN, YOON JUNG-HWAN, SHIN BU-GON, JANG SONG-HO, CHOO SO-YOUNG, HER EUN-KYU
• Format: Patent
• Language: Chinese; English
• Published: 24.07.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a plasma etching method using a Faraday cage. The plasma etching method using a Faraday cage comprises: a step for preparing an etching substrate in a Faraday cage having a mesh portion provided on the upper surface thereof, the substrate having a metal mask provided on one surface thereof, the metal mask having an open pattern portion; a first patterning step for forming a first pattern area on the etching substrate by using plasma etching; and a second patterning step for forming a second pattern area on the etching substrate by using plasma etching after shielding at least a part of the mesh portion by using a shutter. 本发明提供了使用法拉第笼的等离子体蚀刻方法。所述使用法拉第笼的等离子体蚀刻方法包括：在其上表面上设置有网部分的法拉第笼中准备蚀刻基板的步骤，所述基板具有设置在其一个表面上的金属掩模，所述金属掩模具有开口图案部分；通过使用等离子体蚀刻在蚀刻基板上形成第一图案区域的第一图案化步骤；以及在通过使用遮板遮挡网部分的至少一部分之后通过使用等离子体蚀刻在蚀刻基板上形成第二图案区域的第二图案化步骤。