VOLTAGE CONTRAST METROLOGY MARK

• Main Authors: HASTINGS SIMON PHILIP SPENCER, VAN GORP SIMON HENDRIK CELINE, PETERSON BRENNAN, TABERY CYRUS EMIL
• Format: Patent
• Language: Chinese; English
• Published: 24.07.2020
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first teststructures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity betweenthe set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method. 公开了一种测量标记。根据某些实施例，该测量标记包括显影在衬底上的第一层中的第一测试结构集合，第一测试结构集合中的每个第一测试结构包括由第一导电材料制成的多个第一特征。该测量标记还包括显影在邻近第一层的第二层中的第二测试结构集合，第二测试结构集合中的每个第二测试结构包括由第二导电材料制成的多个第二特征。测量标记被配置为：当使用电压对比成像方法而被成像时，指示第一测试结构集合与第二测试结构集合中的相关联的第二测试结构之间的连接性。