Preparation method of Ni/Ag/BiVO4/CdS nano array photoelectrode based on anodic aluminum oxide template

• Main Authors: FU QUN, ZHOU YING, ZHOU SIYU, LEI YONG, TAO JIE
• Format: Patent
• Language: Chinese; English
• Published: 24.07.2020
• Subjects: APPARATUS THEREFOR; CASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; METALLURGY; PERFORMING OPERATIONS; POWDER METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; WORKING METALLIC POWDER

The invention discloses a preparation method of a Ni/Ag/BiVO4/CdS nano array photoelectrode based on an anodic aluminum oxide template. The specific implementation method comprises the following steps: preparing a large-range and highly-ordered nickel column as a substrate through an aluminum oxide template method; including some Ag nanoparticles on the surface of the nickel column by using an ultrasonic-assisted in-situ deposition method; coating the Ag particles with BiVO4 nano-particle films by using an ion continuous adsorption method; and finally coating the outermost layer with a CdS nano-film by using a chemical bath deposition method to finally obtain the Ni/Ag/BiVO4/CdS nano-array composite electrode. Compared with a single BiVO4 photoelectrode, the prepared composite photoelectrode has higher light absorption efficiency, meanwhile, the recombination efficiency of photon-generated carriers is reduced, and the migration efficiency of the photon-generated carriers is improved, so that the photoelectric