Photoresistor, preparation method thereof and sensor formed by photoresistor

• Main Authors: KANG XIAOXU, ZHONG XIAOLAN
• Format: Patent
• Language: Chinese; English
• Published: 17.07.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a photoresistor which comprises a resonant cavity, a reflecting layer, an electrode, layered graphene and quantum dots embedded in the surface of the layered graphene. The reflecting layer is located at the bottom of the resonant cavity, the electrode is located on the periphery of the resonant cavity, and the layered graphene is located on the upper surface of the resonantcavity and the upper surface of the electrode; and when incident light enters the photoresistor, electrons excited by the incident light of the quantum dots are transmitted to the electrode through the layered graphene so that the resistance of the photoresistor changes. According to the photoresistor, the graphene is used as a substrate, and the quantum dots embedded in the surface of the layered graphene are used for extended absorption so that the electrons generated by the quantum dots are quickly transmitted to the electrode by the substrate and the performance of the photoresistor is improved. 本发明公开了一种光敏电阻，包括谐振