Chemical mechanical polishing solution and application thereof

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises silicon dioxide grinding particles and a nitrogen-containing heterocyclic compoundcontaining one or more carboxyl groups. The polishing solution provided by the invention has high si...

Full description

Saved in:
Bibliographic Details
Main Authors HUANG YUERUI, ZHOU WENTING, JING JIANFEN, CAI XINYUAN, MA JIAN, SONG KAI
Format Patent
LanguageChinese
English
Published 07.07.2020
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
Online AccessGet full text

Cover

More Information
Summary:The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises silicon dioxide grinding particles and a nitrogen-containing heterocyclic compoundcontaining one or more carboxyl groups. The polishing solution provided by the invention has high silicon nitride and silicon dioxide polishing rates at the same time. 本发明提供了一种化学机械抛光液，包括二氧化硅研磨颗粒，含一个或多个羧基的含氮杂环化合物。本发明的抛光液同时具有较高的氮化硅和二氧化硅抛光速率。
Bibliography:Application Number: CN201811635545