Method for manufacturing optoelectronic structures provided with coplanar light-emitting diodes

• Main Authors: LARGERON CHRISTOPHE, DAMILANO BENJAMIN, FEUILLET GUY, DUBOZ JEAN-YVES
• Format: Patent
• Language: Chinese; English
• Published: 30.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method for producing at least one optoelectronic structure on a supporting substrate (100). In particular, the present invention relates to the fabrication of an optoelectronic structure (10) having a plurality of coplanar light emitting diodes and formed from a set of light emitting stacks (210, 220, 230). Thus, the present invention uses a cavity having a step profileat the bottom such that the formation of a set of light emitting stacks reproduces the step profile at the bottom of the cavity on the exposed faces of the set of light emitting stacks. The step of flattening the set of light emitting stacks is performed relative to a reference level defined by the exposed surface portion vertically aligned with the deepest step, thereby making it possible to render a set of coplanar light emitting diodes. 本发明涉及一种在支撑衬底(100)上制造至少一个光电结构的方法。特别地，本发明涉及具有多个共面发光二极管并由一组发光堆叠(210，220，230)形成的光电结构(10)的制造。因此，本发明使用底部具有阶差轮廓的凹腔，使得一组发光堆叠的形成在该组发光堆叠的暴露面上再现凹腔底部的阶差轮廓。相对于由与最深的台阶竖直对齐的暴露表面部分所限定的参考水平，进行使一组发光堆