Manufacturing method and structure of aluminum nitride semiconductor film

• Main Authors: YANG XIAOLI, LIU ZHAOZHONG, LIU RUISEN, LIN HUI, LAN WENXIN
• Format: Patent
• Language: Chinese; English
• Published: 26.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a manufacturing method and structure of an aluminum nitride semiconductor thin film, and relates to the field of semiconductor equipment film forming. The method comprises thesteps: forming an aluminum metal layer on one side of the sapphire substrate; nitriding the aluminum metal layer to generate a first aluminum nitride film; generating a second aluminum nitride film onone side, far away from the sapphire substrate, of the first aluminum nitride film; annealing the sapphire substrate with the first aluminum nitride film and the second aluminum nitride film; and generating a third aluminum nitride film on one side, far away from the sapphire substrate, of the second aluminum nitride film. According to the invention, before the second aluminum nitride film is generated; firstly, a first aluminum nitride thin film is generated on a sapphire substrate, and stacking stress caused by subsequent aluminum nitride thin films is effectively reduced through the firstaluminum nitride thin film