Power semiconductor device

• Main Authors: KURZMANN THOMAS, KOCH PHILIPP SEBASTIAN, KREMP SEBASTIAN, KOPROWSKI ANGELIKA, HUMBEL OLIVER, BAUER JOSEF-GEORG, BRANDENBURG JENS, LERCHER ERWIN, CAR DIANA, RUETHING HOLGER
• Format: Patent
• Language: Chinese; English
• Published: 23.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled toa second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateralchip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 [mu]m. In a blocking state, the protection region accommodates a voltagechange of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge. 一种具有功率半导体晶体管配置的功率半导体器件包括：半导体本体，其具有耦合到第一负载端子结构的前侧、耦合到第二负载端子结构的背侧和横向芯片边缘；有源区，