Indium filling apparatus and method for rotary target assembly for sputtering

• Main Authors: BAE KAP ROK, KIM DONG SO, SHIN GYU SIK, HAN SUN SEOK
• Format: Patent
• Language: Chinese; English
• Published: 19.06.2020
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to an indium filling apparatus and a method of a rotary target assembly for sputtering and, more specifically, relates to an indium filling apparatus and a method of a rotary target assembly for sputtering, wherein indium is supplied to be filled in a vacuum state in a filling space existing between a backing tube and a sputtering target. According to the present invention, a vacuum lid portion is mounted on the upper portion of the rotary target assembly for sputtering, and after sealing the filling space existing between the backing tube and the sputtering target, the filling space is evacuated and then indium is supplied. Moreover, the indium filled in the filling space couples the backing tube and the sputtering target without an oxide film. 本发明涉及溅射用旋转靶组件的铟填充装置及填充方法，尤其，涉及可在真空状态下，向存在于背衬管与溅射靶之间的填充空间供给铟来进行填充的溅射用旋转靶组件的铟填充装置及填充方法。本发明的特征在于，将真空盖部安装于溅射用旋转靶组件的上部来封闭存在于背衬管与溅射靶之间的填充空间之后，使填充空间处于真空状态，之后供给铟，从而使填充于填充空间的铟在没有氧化膜的情况下结合背衬管和溅射靶。