Three-dimensional memory device containing through-memory-level contact via structures and method of making the same

• Main Authors: FUKUDA YUKI, KUBO TOMOHIRO, MUSHIGA MITSUTERU, INOUE SHIGEHISA, OTOI HISAKAZU, CUI ZHIXIN, SAKAKIBARA KIYOHIKO, SUGIURA KENJI
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A contact via structure vertically extending through an alternating stack of insulating layers and electrically conductive layers is provided in a staircase region having stepped surfaces. The contactvia structure is electrically isolated from each electrically conductive layer of the alternating stack except for an electrically conductive layer that directly underlies a horizontal interface of the stepped surfaces. A laterally-protruding portion of the contact via structure contacts an annular top surface of the electrically conductive layer. The electrical isolation can be provided by a ribbed insulating spacer that includes laterally-protruding annular rib regions at levels of the insulating layers, or can be provided by annular insulating spacers located at levels of the electricallyconductive layers. The contact via structure can contact a top surface of an underlying metal interconnect structure that overlies a substrate to provide an electrically conductive path. 本申请公开一种接触通孔结构，其在具有阶梯表面的楼梯区中竖直地延伸穿过绝缘层和导