Light-emitting diode and manufacturing method thereof

• Main Author: CAI JUNFU
• Format: Patent
• Language: Chinese; English
• Published: 09.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a manufacturing method of a light emitting diode. The method comprises the steps that: (1) an epitaxial layer and a to-be-stripped sacrificial layer of the light emitting diode are formed through an epitaxial growth process, and the to-be-stripped sacrificial layer is located on one side of the epitaxial layer; (2) the sacrificial layer is treated through a photomask process and an etching process, so that a sacrificial layer pattern can be formed, and one side of the epitaxial layer around the sacrificial layer pattern is partially exposed; (3) the surface of the sacrificial layer pattern and one side of the epitaxial layer are covered with a to-be-patterned insulating layer; and (4) the sacrificial layer pattern and the insulating layer on the surface of the sacrificial layer are stripped through a wet etching process, so that a patterned insulating layer can be formed. 一种发光二极管的制作方法，包括：（1）通过外延生长工艺形成发光二极管的外延层以及待剥离牺牲层，待剥离牺牲层位于外延层的一面侧；（2）通过光罩工艺和蚀刻工艺处理所述牺牲层，形成牺牲层图形，在牺牲层图形周围外延层的所述一面侧被部分暴