Vertical cavity surface emitting laser and manufacturing method thereof

The embodiment of the invention provides a vertical cavity surface emitting laser and a manufacturing method thereof. The vertical cavity surface emitting laser comprises an N-DBR which is arranged above a substrate and comprises a first distributed Bragg reflector arranged in a stacked manner; an a...

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Bibliographic Details
Main Authors ZHANG LUJIAN, FAN XINYE, WANG BAOYONG
Format Patent
LanguageChinese
English
Published 22.05.2020
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Summary:The embodiment of the invention provides a vertical cavity surface emitting laser and a manufacturing method thereof. The vertical cavity surface emitting laser comprises an N-DBR which is arranged above a substrate and comprises a first distributed Bragg reflector arranged in a stacked manner; an active layer which is arranged on the N-DBR and comprises a quantum well structure arranged in a stacked manner; and a P-DBR, wherein the P-DBR is arranged on the active layer and comprises a second distributed Bragg reflector arranged in a stacked manner. The embodiment of the invention provides a vertical cavity surface emitting laser and a manufacturing method thereof. By arranging the quantum well structure on the active layer and arranging the multi-mode structures on the N-DBR and the P-DBR, single-mode polarization is achieved, polarization is more sensitive, the threshold current of VCSEL can be reduced, the photoelectric conversion efficiency is improved, and the quality of output light beams is higher. 本发明
Bibliography:Application Number: CN202010130056