Manufacturing method of photoelectric detector

• Main Authors: LI ZHIHUA, ZHANG PENG, TANG BO, LIU RUONAN, LI BIN
• Format: Patent
• Language: Chinese; English
• Published: 08.05.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a manufacturing method of a photoelectric detector. The manufacturing method comprises the following steps: providing a first semiconductor substrate; forming a detection layeron the upper surface of the first semiconductor substrate by adopting a bonding process; etching the detection layer to expose a part of the upper surface of the first semiconductor substrate; and forming dielectric layers on the partial upper surface of the first semiconductor substrate and the upper surface of the detection layer. According to the manufacturing method of the photoelectric detector provided by the invention, the detection layer is formed on the upper surface of the semiconductor substrate by adopting a bonding process, so the dark current of the silicon-based germanium detector can be reduced. 本发明公开了一种光电探测器的制造方法，包括：提供第一半导体衬底；采用键合工艺在所述第一半导体衬底的上表面形成探测层；对所述探测层进行刻蚀，暴露出所述第一半导体衬底的部分上表面；在所述第一半导体衬底的所述部分上表面和所述探测层的上表面形成介质层。本发明提供的光电探测器的制造方法，采用键合工艺在半导体衬底的上表面形成探测层，可以减小硅基锗探测器的暗电流。