Method for forming semiconductor device and semiconductor device

• Main Authors: LU JIECH-FUN, CHOU SHIH-PEI, TSAO TSUN-KAI, WU WEIUANG
• Format: Patent
• Language: Chinese; English
• Published: 08.05.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to the embodiment of the application, a method of fabricating self-aligned grids in a BSI image sensor is provided. The method includes depositing a first dielectric layer over a back surface of a substrate that has a plurality of photodiodes formed therein, forming a grid of trenches, and filling in the trenches with dielectric material to create a trench isolation grid. Here, a trenchpasses through the first dielectric layer and extends into the substrate. The method further includes etching back dielectric material in the trenches to a level that is below an upper surface of thefirst dielectric layer to form recesses overlaying the trench isolation grid, and filling in the recesses with metallic material to create a metallic grid that is aligned with the trench isolation grid. According to the embodiment of the invention, a method of forming a semiconductor device and a related semiconductor device are also provided. 根据本申请的实施例，提供了一种在BSI图像传感器中制造自对准栅格的方法。该方法包括在衬底的背面上沉积第一介电层，该衬底具有形成在其中的多个光电二极管，形成沟槽栅