PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

The invention relates to a pattern formation method and a method for manufacturing a semiconductor device. In the pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is pat...

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Bibliographic Details
Main Authors WU YING-HAO, CHEN WEN-YEN, SUEN SHU-HUEI, CHEN CHIH-HAO, LEE YIANG, TSENG SHIH-HUA, LIN JIANN-HORNG
Format Patent
LanguageChinese
English
Published 08.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a pattern formation method and a method for manufacturing a semiconductor device. In the pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask. 本公开涉及图案形成方法和用于制造半导体器件的方法。在图案形成方法中，在要被图案化的目标层上方形成光致抗蚀剂图案。在光致抗蚀剂图案上形成延伸材料层。通过至少使用延伸材料层作为蚀刻掩模来图案化目标层。
Bibliography:Application Number: CN201911042983