Source-drain resistance testing method

The invention provides a source-drain resistance test method. The method comprises steps that a first resistance of a first test structure, a second resistance of a second test structure, a first channel length of the first test structure and a second channel length of the second test structure are...

Full description

Saved in:
Bibliographic Details
Main Author CHEN JINMING
Format Patent
LanguageChinese
English
Published 01.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The invention provides a source-drain resistance test method. The method comprises steps that a first resistance of a first test structure, a second resistance of a second test structure, a first channel length of the first test structure and a second channel length of the second test structure are obtained by forming a first test structure and a test structure; a fitting curve is formed, the fitting curve comprises the first resistance and the second resistance correspond to a first coordinate axis, the first channel length and the second channel length correspond to a second coordinate axis,and an intercept is formed between the fitting curve and the first coordinate axis. The method is advantaged in that by calculating the intercept between the fitting curve and the first coordinate axis, the first source-drain resistance or the second source-drain resistance is obtained, so an accurate value of the first source-drain resistance or the second source-drain resistance can be obtained, and accuracy of the mea
Bibliography:Application Number: CN201911364229