GROUP III-V SEMICONDUCTOR DEVICES HAVING ASYMMETRIC SOURCE AND DRAIN STRUCTURES

• Main Authors: MURTHY ANAND S, RACHMADY WILLY, KENNEL HAROLD W, MINUTILLO NICHOLAS G, KAVALIEROS JACK T, METZ MATTHEW V, DEWEY GILBERT, HUANG CHENG-YING, MA SEAN T
• Format: Patent
• Language: Chinese; English
• Published: 21.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Group III-V semiconductor devices having asymmetric source and drain structures and their methods of fabrication are described. In an example, an integrated circuit structure includes a gallium arsenide layer on a substrate. A channel structure is on the gallium arsenide layer. The channel structure includes indium, gallium and arsenic. A source structure is at a first end of the channel structureand a drain structure is at a second end of the channel structure. The drain structure has a wider band gap than the source structure. A gate structure is over the channel structure. 描述了具有非对称源极结构和漏极结构的III-V族半导体器件及其制作方法。在示例中，一种集成电路结构包括处于衬底上的砷化镓层。沟道结构处于砷化镓层上。该沟道结构包括铟、镓和砷。源极结构处于沟道结构的第一端并且漏极结构处于沟道结构的第二端。漏极结构具有比源极结构宽的带隙。栅极结构处于沟道结构之上。