INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN STRUCTURES

• Main Authors: BOHR MARK, BOWONDER ANUPAMA, MEHANDRU RISHABH, GHANI TAHIR
• Format: Patent
• Language: Chinese; English
• Published: 07.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Integrated circuit structures having asymmetric source and drain structures, and methods of fabricating integrated circuit structures having asymmetric source and drain structures, are described. Forexample, an integrated circuit structure includes a fin, and a gate stack over the fin. A first epitaxial source or drain structure is in a first trench in the fin at a first side of the gate stack. Asecond epitaxial source or drain structure is in a second trench in the fin at a second side of the gate stack, the second epitaxial source or drain structure deeper into the fin than the first epitaxial source or drain structure. 本公开描述了具有不对称源极和漏极结构的集成电路结构，以及制造具有不对称源极和漏极结构的集成电路结构的方法。例如，集成电路结构包括鳍和位于鳍上方的栅极堆叠体。第一外延源极或漏极结构位于鳍中栅极堆叠体的第一侧的第一沟槽中，第二外延源极或漏极结构位于鳍中栅极堆叠体的第二侧的第二沟槽中，第二外延源极或漏极结构比第一外延源极或漏极结构更深入鳍中。